| PART |
Description |
Maker |
| FQD30N06 FQU30N06 FQD20N06 FQU20N06 FQD30N06TF |
60V N-Channel QFET
60V N-Channel MOSFET 22.7 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FQT13N06L FQT13N06LTF FQT13N06LL99Z |
60V LOGIC N-Channel MOSFET
60V N-Channel Logic level QFET
60V LOGIC N-Channel MOSFET 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| STS7NF60L |
N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET II POWER MOSFET
N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFETII POWER MOSFET N沟道60V 0.017欧姆- 7.5A的SO - 8封装STripFET⑩二功率MOSFET
N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET⑩ II POWER MOSFET
N-CHANNEL 60V - 0.017 OHM - 7.5A SO-8 STRIPFET II POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| IRHLF740Z4 IRHLF770Z4 IRHLF780Z4 IRHLF730Z4 IRHLF6 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射逻辑电平功率MOSFET通孔（到39
From old datasheet system
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQP17P06 FQP17P06J69Z |
17 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220
60V P-Channel MOSFET
60V N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| FQB17P06 FQI17P06 FQB17P06TM FQI17P06TU |
GIGATRUE 550 CAT6 PATCH 10 FT, SNAGLESS, GRAY
60V P-Channel MOSFET
60V P-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）| TO - 220AB现有
|
Powerex, Inc.
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| FDS568208 FDS5682 |
N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mOhms
N-Channel PowerTrench MOSFET 60V, 7.5A, 21m ohm
|
Fairchild Semiconductor
|
| IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
| IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier
Power MOSFET
|
