PART |
Description |
Maker |
HGTP12N60B3 HGT1S12N60B3S FN4410 |
From old datasheet system 27A, 600V, UFS Series N-Channel IGBTs 27A/ 600V/ UFS Series N-Channel IGBTs
|
INTERSIL[Intersil Corporation]
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IRG4PC40FD IRG4PC40 IRG4PC40FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
HGTP12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
Fairchild Semiconductor
|
APT6011B2VR APT6011LVR |
POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6011LVFR |
POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
APT6013JFLL |
POWER MOS 7 600V 39A 0.130 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6029BLL |
POWER MOS 7 600V 21A 0.290 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo... Advanced Power Technology
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