PART |
Description |
Maker |
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDD10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH02SG120 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDC05S60CE |
2nd generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDB10S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG Infineon Technologies A...
|
IDD05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|