| PART |
Description |
Maker |
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EC2-12ND EC2-12SND EC2-24ND EC2-24SND EC2-3ND EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type 高绝缘，高击穿电压，结构紧凑，重量轻，表面安装型
Driver IC; Package/Case:24-SSOP; Supply Voltage Max:5.25V; Leaded Process Compatible:No; Operating Temp. Max:70 C; Operating Temp. Min:-10 C; Peak Reflow Compatible (260 C):No; Frequency:20GHz; Interface Type:Serial
|
TE Connectivity, Ltd.
NEC, Corp.
NEC Corp.
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256C |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| K6R1016C1C-C10 K6R1016C1C-C12 K6R1016C1C-C15 K6R10 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| FE-1382-10 |
Operating Voltage= 115/240 Vac Operating Current Max= 10 amp
|
JMK Inc.
|
| KK-0332-30 |
Operating Voltage= 250/440 Vac Operating Current Max= 30 amp/Ph
|
JMK Inc.
|
| ZG-1435-5B |
Operating Voltage = 125/250 Vac Operating Current = 5.0 Ampere
|
JMK Inc.
|
| ZG-1435-1B |
Operating Voltage = 125/250 Vac Operating Current = 1.0 Ampere
|
JMK Inc.
|
| FF-1503-18 |
Operating Voltage = 125 Vac Operating Current (Max) = 18 AMP A/C
|
JMK Inc.
|
