| PART |
Description |
Maker |
| SIGC81T120R2C |
IGBTs - HV Chips - SIGC81T120R2C, 1200V , 50A
|
Infineon
|
| SIGC18T60NC |
IGBTs - HV Chips - SIGC18T60NC, 600V, 20A
|
Infineon
|
| SIGC81T120R2CL |
IGBTs - HV Chips - SIGC81T120R2CL, 1200V, 50A
|
Infineon
|
| SIGC68T170R3 |
IGBTs - HV Chips - SIGC68T170R3, 1700V, 50A
|
Infineon
|
| Q67041-S2856-A001 Q67041-S2856-A002 SIGC18T60SNC S |
IGBTs - HV Chips - SIGC18T60SNC, 600V, 20A
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
| SSB-COB6527GW |
65mm x 27mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN CHIPS, 44 CHIPS, 4.2V 220mA
|
LUMEX INC.
|
| SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT
IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| BM-10EG88ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| SSB-COB7248GW |
72mm x 48mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 84 CHIPS, 565mm REEN CHIPS, 4.2V 420mA
72mm x 48mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 84 chips 565NM green
|
http://
ETC
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
