| PART |
Description |
Maker |
| IRF7311TR IRF7311TRPBF |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
| V23990-K420-A60-0B-PM V23990-K420-A60-0A-PM V23990 |
Mitsubishi Generation 6.1 technology
|
Vincotech
|
| IRF7304PBF IRF7304TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
