| PART |
Description |
Maker |
| A42L8316 A42L8316S A42L8316S-30 A42L8316V-30U A42L |
40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| V53C317405A V53C317405A50 V53C317405A60 |
4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| A420616 A420616V-50U A420616S-45 A420616S-50 A4206 |
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| V53C518165A V53C518165A50 V53C518165A60 |
1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic Corp
|
| V53C365805A |
3.3 Volt 8M X 8 EDO Page Mode CMOS Dynamic RAM(3.3V 8Mx8 EDO页面模式CMOS动态RAM)
|
Mosel Vitelic, Corp.
|
| V53C16258SHT30 V53C16258HK40 V53C16258SHK40 V53C16 |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| V53C8128H V53C8128H35 V53C8128H40 V53C8128H45 V53C |
ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V53C16258SHK45 V53C16258HK25 V53C16258HK30 V53C162 |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
Mosel Vitelic Corp
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
