| PART |
Description |
Maker |
| AMS2306 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2319 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2304 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| QM3007K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| LS14500EX |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| 2N7000 |
High density cell design for low RDS(ON) Voltage controlled small signal switch
|
TY Semiconductor Co., Ltd
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
