| PART |
Description |
Maker |
| AMS2306 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| LS14500EX |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
| LC4032B-10T44I LC4032V-10T48I LC4032V-10TN44I LC40 |
Super Fast High Density PLDs
|
Lattice Semiconductor
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4440 |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9235 |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
