| PART |
Description |
Maker |
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF5S19090LSR3 MRF5S19090LR3 |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
|
FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
|
| MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21 |
RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET
2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF9060 MRF9060R1 MRF9060S MRF9060SR1 |
4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
飞思卡尔半导体(中国)有限公司
Motorola, Inc.
Advanced Semiconductor
MOTOROLA[Motorola, Inc]
|
| ZX10-2-12 ZX10-2-126 ZX10-2-20 ZX10-2-25 ZX10-2-42 |
Power Splitters/Combiners 2 Way-0?? 50蟹 2 to 12600 MHz
Power Splitters/Combiners 2 Way-0 50з 2 to 12600 MHz 1900 MHz - 4200 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS
Power Splitters/Combiners 2 Way-0 50з 2 to 12600 MHz 200 MHz - 2000 MHz RF/MICROWAVE COMBINER, 2.2 dB INSERTION LOSS
Power Splitters/Combiners 2 Way-0 50з 2 to 12600 MHz 7400 MHz - 12600 MHz RF/MICROWAVE COMBINER, 1.3 dB INSERTION LOSS
ER 8 TO 10 REDUCTION SLEEVE RoHS Compliant: No 2 MHz - 1200 MHz RF/MICROWAVE COMBINER, 1.5 dB INSERTION LOSS
Power Splitters/Combiners 2 Way-0 50з 2 to 12600 MHz 4750 MHz - 9800 MHz RF/MICROWAVE COMBINER, 1.2 dB INSERTION LOSS
Power Splitters/Combiners 2 Way-0°, 50 2 to 12600 MHz
Power Splitters/Combiners 2 Way-0, 50 2 to 12600 MHz
Power Splitters/Combiners 2 Way-0∑, 50з 2 to 12600 MHz
Power Splitters/Combiners 2 Way-0/ 50 2 to 12600 MHz
|
MINI[Mini-Circuits]
|
| MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3 |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9045LR1 MRF9045LSR1 |
945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| 2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION
|
NEC
|
|
