| PART |
Description |
Maker |
| HMC717LP3 |
Low Noise Amplifier SMT
|
Hittite Microwave Corporation
|
| HMC341LC3B09 |
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
21000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC374E |
SMT PHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz
|
Hittite Microwave
|
| HMC517LC409 |
SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz
|
Hittite Microwave Corporation
|
| HMC617LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz
|
Hittite Microwave Corporation
|
| HMC818LP4E10 |
GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC758LP3 HMC758LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz
|
Hittite Microwave Corporation
|
| HMC817LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz
|
Hittite Microwave Corporation
|
| HS-5104ARH-T HS9-5104ARH-T HS1-5104ARH-T |
RESISTOR; SMT; FILM;15.0 OHM;250.0 MW QUAD OP-AMP, 3000 uV OFFSET-MAX, 8 MHz BAND WIDTH, CDFP14
Radiation Hardened Low Noise Quad Operational Amplifier
|
Intersil, Corp.
Intersil Corporation
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
