| PART |
Description |
Maker |
| MTW10N100E-D |
Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247
|
ON Semiconductor
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| NTF3055L175T1 NTF3055L175T1G |
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 2.0 A, 60 V, Logic Level 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
ON Semiconductor
|
| NTP75N06 NTP75N06D NTP75N06G NTB75N06 NTB75N06G NT |
Power MOSFET 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 75 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| NTB75N03-06T4G NTB75N03-06G NTB75N03-006 NTB75N03- |
75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, CASE 418AA-01, D2PAK-3
Power MOSFET 75 Amps, 30 Volts
|
ON Semiconductor
|
| APTM100UM65DAG08 |
Single switch with Series diode MOSFET Power Module 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi Corporation
Microsemi, Corp.
|
| NTB23N03RT4G NTB23N03R NTB23N03RG NTB23N03RT4 |
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK 6 A, 25 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MMFT5P03HDT3 MMFT5P03HD MMFT5P03HD-D |
30V N-Channel PowerTrench MOSFET 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 5 Amps, 30 Volts P-Channel SOT-223
|
ONSEMI[ON Semiconductor]
|
|
