| PART |
Description |
Maker |
| ND4126 ND412610 |
260 Amperes / Up to 2400 Volts Dual Diode Isolated Module
|
Powerex Power Semiconductors
|
| T7202045 T7201045 T7200855 T7202255 T7201245 T7200 |
Phase Control SCR (450-550 Amperes 2400 Volts) 850 A, 1800 V, SCR
Phase Control SCR (450-550 Amperes 2400 Volts) 700 A, 1800 V, SCR
Phase Control SCR (450-550 Amperes 2400 Volts) 700 A, 1200 V, SCR
Phase Control SCR (450-550 Amperes 2400 Volts) 850 A, 600 V, SCR
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| ND410626 ND410826 ND411026 ND411426 ND411626 ND411 |
POW-R-BLOK Dual Diode Isolated Module (260 Amperes / Up to 2000 Volts) 260 A, 800 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| R7S01200A |
General Purpose Rectifier (1200 Amperes Average 2400 Volts)
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| C441PN C441L C441LB C441LD C441PD C441PM C441PB |
1200V, 750A phase control single thyristor
Phase Control SCR 750 Amperes Average 2400 Volts
Phase Control SCR 750 Amperes Avg 1300-1800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| PD412411 PD4111 PD412211 PD411811 PD412011 |
POW-R-BLOK Dual Diode Isolated Module (1100 Amperes / Up to 2400 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| 2224-6L |
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 22; Case Style: 55LV-1 S BAND, Si, NPN, RF POWER TRANSISTOR
3.3V EconoReset
6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
|
| 2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor
12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz
NV Trimmer Potentiometer
|
GHz Technology
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts
128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
| CM50BU-24H |
Four IGBTMOD?/a> U-Series Module 50 Amperes/1200 Volts
Four IGBTMOD⑩ U-Series Module 50 Amperes/1200 Volts
Four IGBTMOD U-Series Module 50 Amperes/1200 Volts
Four IGBTMODU-Series Module 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| MB12A35V80 MB12A10 MB12A10V05 MB12A10V10 MB12A10V2 |
Modular Single Phase Assemblies 10-35 Amperes/50-800 Volts 模块化单相电压大10-35 Amperes/50-800
Modular Single Phase Assemblies 10-35 Amperes/50-800 Volts 模块化单相电压大0-35 Amperes/50-800
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
