| PART |
Description |
Maker |
| MG200J6ES60 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG1200FXF1US51 |
TOSHIBA GTR Module Silicon N-Channel IGBT 东芝滋养模块硅N沟道IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG200Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG400Q1US41 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG100Q2YS11 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| MG300Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG300J2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG150Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG75Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG300Q2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MG30G6EL2 |
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE 东芝滋养模块硅npn型三重扩散型
|
Renesas Electronics, Corp.
ETC
Toshiba Semiconductor
|
