| PART |
Description |
Maker |
| MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications
Power 5A 100V Darlington NPN
Power 5A 100V PNP
|
ON Semiconductor
|
| 8TQ080S 8TQ100S 8TQ 8TQ10 8TQ100STRR 8TQ080STRR |
16 A SPDT MINIATURE POWER RELAY
SCHOTTKY RECTIFIER
100V 8A Schottky Discrete Diode in a D2-Pak package
80V 8A Schottky Discrete Diode in a D2-Pak package
|
IRF[International Rectifier]
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp.
Microsemi Corporation
|
| 100BGQ100J 100BGQ100 |
100V 100A Schottky Discrete Diode in a PowIRtab (Short) package
100V 100A Schottky Discrete Diode in a PowIRtab package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 30BQ100 30BQ100TR |
100V 3A Schottky Discrete Diode in a SMC package
|
International Rectifier
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| 10DF1TR 10DF1 |
100V 1A Ultra-Fast Discrete Diode in a DO-204AL package
|
International Rectifier
|
| 2SB631 2SB631K 2SD600 2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| FZT853 |
100V NPN MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
