PART |
Description |
Maker |
MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
MS1336 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
SD1275-01 |
VHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
MS1401 |
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS
|
Advanced Power Technolo... Advanced Power Technology
|
RF2127 |
RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS TRANSISTOR RF
|
RF THOMSOM
|
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
Mitsubishi Electric Corporation
|
MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... Microsemi, Corp.
|
HYB18M1G320BF-7.5 |
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
|
Qimonda AG
|
HYE18L512160BF-7.5 HYB18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
Qimonda AG
|
HYB18L512160BF-7.5 HYE18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
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