PART |
Description |
Maker |
FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE 20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
8N65G-T2Q-T 8N65L-T2Q-T 8N65G-TA3-T 8N65G-TF1-T 8N |
8A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
3N65ZL-TF3-T |
3A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
2N65G-TA3-T 2N65L-TM3-T 2N65L-TF1-T |
2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
12N65G-T2Q-T 12N65G-TA3-T 12N65G-TF1-T 12N65L-T2Q- |
12A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
10N65 10N65G-TA3-T 10N65G-TF1-T 10N65L-TQ2-T 10N65 |
10A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
PB-CDM22010-1509 |
650V, 10A N-Channel Power MOSFET
|
Central Semiconductor C...
|
STP9NK65Z STP9NK65ZFP |
N-CHANNEL 650V - 1 OHM - 6.4A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
|
ST Microelectronics
|
STP11NM60_07 STB11NM60 STB11NM60-1 STB11NM60T4 STP |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] 意法半导
|
ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7 Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7 Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7 Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220 Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|