| PART |
Description |
Maker |
| IRFIB5N65 IRFIB5N65A |
650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)
|
International Rectifier
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 3N65 3N65G-TA3-T 3N65L-TM3-R 3N65L-TF1-T |
3A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N65ZL-TF1-T 2N65ZL-TF3-T 2N65ZL-TM3-T 2N65ZL-TN3- |
2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| DMK4N65-TU |
650V N-Channel Power MOSFET
|
DIYI Electronic Technol...
|
| 2N65LL-TA3-T 2N65LL-TF1-T 2N65LL-TF3-T 2N65LL-TM3- |
2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N65G-TA3-T 2N65L-TM3-T 2N65L-TF1-T |
2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 12N65G-T2Q-T 12N65G-TA3-T 12N65G-TF1-T 12N65L-T2Q- |
12A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 10N65 10N65G-TA3-T 10N65G-TF1-T 10N65L-TQ2-T 10N65 |
10A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 22N65L-T47-T 22N6511 22N65G-T47-T |
22A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
