| PART |
Description |
Maker |
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1319BV18-167BZC CY7C1319BV18-278BZC CY7C1321BV |
2M X 8 DDR SRAM, 0.45 ns, PBGA165
512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1916BV18-250BZC CY7C1316BV18 CY7C1316BV18-167B |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1318BV18-167BZC CY7C1318BV18-167BZI CY7C1318BV |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1318CV18-200BZI CY7C1318CV18-200BZXC CY7C1318C |
18-Mbit DDR II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
