PART |
Description |
Maker |
M2V56S20AKT-6 M2V56S20AKT-5 |
256M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2V56S40ATP-7 M2V56S40ATP-6 M2V56S40ATP-5 M2V56S20 |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2S56D20AKT M2S56D20ATP M2S56D30AKT M2S56D30ATP M2 |
256M Double Data Rate Synchronous DRAM
|
Elpida Memory
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HYB39S256160CT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation Toshiba, Corp.
|
HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM 256Mb (2MBank2) Synchronous DRAM 256Mb的(200万?4Bank2)同步DRAM 256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82 256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82 64M X 16 DDR DRAM, 0.3 ns, PBGA100 64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|