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WTPB16A60SW - Sensitive Gate Bi-Directional Triode Thyristor

WTPB16A60SW_5810696.PDF Datasheet


 Full text search : Sensitive Gate Bi-Directional Triode Thyristor


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ONSEMI[ON Semiconductor]
BTA151 BTA151-500R BTA151-650R BTA151-800R BTA151S Thyristors sensitive gate 晶闸管敏感门
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
MCK100-6 400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage
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Philips
BT138 BT138-600D BT138-600E BT138-800E BT138-600E1 4Q Triac 4Q双向可控
12 A four-quadrant triacs, sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack
12 A four-quadrant triacs, sensitive gate; Package: SOT78 (TO-220AB); Container: Tube pack
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2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
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T1M5F600A Sensitive Gate Triacs
Lite-On
1PT08E-06 1PT08E-03 1PT08E-08 1PT08E-05 1PT06E-03 Sensitive gate SCRs, 1A
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