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2N3902 - SI NPN POWER BJT, I(C) = 2.5A TO 4.9A

2N3902_5853992.PDF Datasheet

Part No.

2N3902

Description

SI NPN POWER BJT, I(C) = 2.5A TO 4.9A

File Size

74.81K / 1 Page

Maker

New Jersey Semi-Conductor Products, Inc.

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Part: 2N3902

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Related Part Number

PART	Description	Maker
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
164-22 163-28 163-12 164-12 164-26 164-20 164-30 1	TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 260V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 160V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 120伏特五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 40V的五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 280V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\| npn型\| 280伏特五（巴西）总裁\|甲一（c）\| STR-5/16	Ecliptek, Corp.
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101	Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 400MA I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 15A I(C) \| SIP 晶体管\|晶体管\| npn型\| 200伏五（巴西）总裁\| 15A条（c）的\|园区 TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| TO-5 晶体管\|晶体管\|叩\| 20V的五（巴西）总裁\| 300mA的一（c）\|	NXP Semiconductors N.V.
2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S	TRANSISTOR \| BJT \| PNP \| 600V V(BR)CEO \| 200MA I(C) \| SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 200MA I(C) \| SC-71 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 200mA的一（c）\|律师- 71 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 200MA I(C) \| SIP 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 200mA的一（c）\|园区 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| SIP 晶体管\|晶体管\|进步党\| 50V五（巴西）总裁\| 5A条一（c）\|园区晶体管\|晶体管\|进步党\| 50V五（巴西）总裁\| 150毫安一（c）\|园区晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 5A条一（c）\|律师- 71 5个引#181;带看门狗和手动复位的P监控电路晶体管\|晶体管\|叩\| 25V的五（巴西）总裁\| 50mA的一（c）\|园区晶体管\|晶体管\|叩\| 20V的五（巴西）总裁\| 1A条一（c）\|律师- 71 晶体管\|晶体管\|叩\| 400V五（巴西）总裁\| 100mA的一（c）\|律师- 71 晶体管\|晶体管\|叩\| 25V的五（巴西）总裁\| 200mA的一（c）\|律师- 71 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| SIP TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 3A I(C) \| SIP TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SC-71 TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 5A I(C) \| SIP TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SIP TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SC-71 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| SIP TRANSISTOR\|BJT\|NPN\|400VV(BR)CEO\|100MAI(C)\|SC-71	Power Integrations, Inc.
2SB331 2SB330 2SD331E	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| TO-220AB TRANSISTOR \| BJT \| PNP \| 150MA I(C) \| TO-5 NPN/PNP Triple Diffused Planar Silicon Transistors, Low Freq. Power Amp. Applications	Sanyo Semiconductor
2SC2059KJM 2SC2059KJN 2SC2059KJP 2SC3082KSP 2SC308	TRANSISTOR \| BJT \| NPN \| 32V V(BR)CEO \| 600MA I(C) \| SOT-23 晶体管\|晶体管\|叩\| 32V的五（巴西）总裁\| 600毫安一（c）\| SOT - 23封装 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\|叩\| 25V的五（巴西）总裁\| 50mA的一（c）\| SOT - 23封装 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 200MA I(C) \| SOT-23 TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 20MA I(C) \| SOT-23 TRANSISTOR \| BJT \| NPN \| 19V V(BR)CEO \| 50MA I(C) \| SOT-23 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR\|BJT\|NPN\|20VV(BR)CEO\|20MAI(C)\|SOT-23	TT electronics Semelab, Ltd.
WT4321 WT4424 WT4415 WT4416 WT4425 WT4432 WT4433	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 325A I(C) \| FBASE-F TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 325A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 275A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 275A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 325A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 375A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 375A I(C) \| STR-3/4
2SD2402 2SD2402EX 2SD2402EZ 2SD2402EY	NPN epitaxial type silicon transistor TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-243 TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 5A I(C) \| TO-243 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 2SD2402数据表\|数据表[04/2002]	nec Dialight PLC
ECG340 ECG330 ECG330W ECG331	TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 500MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 25A I(C) \| TO-36 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 15A I(C) \| TO-220
2SA1775N 2SA1775Q 2SA1775P 2SD1189FP 2SD1189FQ 2SD	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 1A I(C) \| TO-126 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 32V V(BR)CEO \| 2A I(C) \| TO-126 Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 10A I(C) \| TO-126 TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-251VAR 150mA, SOT23, Low-Dropout Linear Regulators with Internal Microprocessor Reset Circuit Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管\|晶体管\|叩\| 32V的五（巴西）总裁\|甲一（c）\|26 TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| TO-126 晶体管\|晶体管\|进步党\| 80V的五（巴西）总裁\| 700mA的一（c）\|26 Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管\|晶体管\|叩\| 80V的五（巴西）总裁\| 700mA的一（c）\|26 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 100MA I(C) \| TO-126 晶体管\|晶体管\|叩\| 300V五（巴西）总裁\| 100mA的一（c）\|26	Rohm Co., Ltd. New Japan Radio Co., Ltd.
2SD1776P 2SD1776AP 2SD1776AO 2SD1776AQ 2SD1776O	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| SOT-186 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 2A I(C) \| SOT-186 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一（c）\|的SOT - 186	NEC, Corp.

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