PART |
Description |
Maker |
M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
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ST Microelectronics
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M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics 意法半导 STMicroelectronics N.V. ST Microelectronics
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M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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STMICROELECTRONICS[STMicroelectronics]
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M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽,双行,页闪存和2兆位128K的x16的SRAM,多个存储产
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STMicroelectronics N.V. http://
|
M36DR232A M36DR232B M36DR232BZA M36DR232 M36DR232A |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32 MBIT (2MB X16, DUAL BANK, PAGE) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M29DW324DT M29DW324DB 8730 M29DW324DT90ZE6T M29DW3 |
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory From old datasheet system 32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
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STMICROELECTRONICS[STMicroelectronics]
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M59MR032DZC M59MR032C M59MR032C100GC6T M59MR032C10 |
From old datasheet system 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
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M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M58MR016-ZCT M58LR016D100ZC6T M58LR016C120ZC6T M58 |
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 16兆x16插槽,复用的I / O,双行,突发1.8V电源快闪记忆
|
STMicroelectronics N.V. 意法半导
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