PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
2SA1008 2SA1008-S 2SA1008-Z 2SA10081 2SA10082 2SA1 |
SILICON POWER TRANSISTOR 硅功率晶体管 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN Silicon transistor
|
NEC, Corp. NEC[NEC]
|
MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
|
2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806 |
Low frequency power amplification Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
|
2SB1430 |
Silicon power transistor PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
|
2SD2164 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
2SB624 2SB624-T1B 2SB624-L 2SB624-T2B 2SB624BV3 |
BJT 双极型晶体管 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD Silicon transistor
|
NEC, Corp. NEC[NEC] Weitron Technology
|
2SB1261-Z 2SB1261L-Z 2SB1261K-Z 2SB1261M-Z 2SB1261 |
Silicon power transistor PNP SILICON EPITAXIAL TRANSISTOR MP-3 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC Corp.
|
2SA1221 2SA1222 2SA1222-T 2SA1221-T 2SA1222K |
BJT PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS Silicon transistor
|
NEC Corp. NEC[NEC]
|
2SB962 2SB962-Z 2SB962-ZE 2SB962-ZP 2SB962-ZR 2SB9 |
Silicon transistor BJT 3-Pin, Ultra-Low-Power SC70/SOT23 Voltage Detectors 晶体 PNP SILICON EPITAXIAL TRANSISTOR MP-3 进步党硅外延晶体管型号:MP - 3
|
NEC[NEC] NEC Corp. NEC, Corp.
|