| PART |
Description |
Maker |
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRG4PC40U IRG4PC40U-EPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
|
Vishay Intertechnology, Inc.
International Rectifier
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| IRG4PC50K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
|
IRF[International Rectifier]
|
| IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRGPC40U |
600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRG4BC30U-S |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速（VCES和\u003d 600V电压的Vce（on）的典型。\u003d 1.95V，@和VGE \u003d 15V的，集成电路\u003d 12A条）
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| FGW50N60H |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
| IRG4BC30U-SPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier
|
