| PART |
Description |
Maker |
| SPL2F85 |
Laser TO220 850 nm
|
Infineon
|
| ADL-65075TA2 |
General purpose red laser light source Laser pointer lndustrial laser markers measuring instruments
|
Roithner LaserTechnik GmbH
|
| PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220.
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| STB20NM5007 STB20NM50 STP20NM50 STB20NM50-1 STP20N |
N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET
N-channel 500V - 0.20ヘ - 20A - TO220/FP-D2PAK-I2PAK MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| LH-FSLH-S090C-0406A FSLH-S090C |
850 MHz - 950 MHz RF/MICROWAVE SPLITTER AND COMBINER, 1 dB INSERTION LOSS
2012 Size 850/950 MHz Chip Multilayer Splitter/Combiner
|
HITACHI METALS LTD
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| PPL0500B PPL1000B |
HEATSINK TO220/218 5.0C/W
HEATSINK TO220/218 3.1C/W 散热片TO220/218 3.1C /
|
Hamamatsu Photonics K.K.
|
| ML64114R ML6XX14 ML60114R |
785 nm, LASER DIODE
From old datasheet system
AIGaAs LASER DIODES AIGaAs激光二极管
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MCP6L92T-E_MS MCP6L92T-E_OT MCP6L92T-E_SL MCP6L92T |
10 MHz, 850 μA Op Amps
10 MHz, 850 楼矛A Op Amps
|
Microchip Technology
|
| AOT3N100L |
TO220 PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
