| PART |
Description |
Maker |
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTH14N100 |
Discrete MOSFETs: Standard N-channel Types
MegaMOSTMFET 14 A, 1000 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SDF12N100GAFEHSN |
12 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SOLITRON DEVICES INC
|
| SFF6N100 |
4.5 AMP 1000 VOLTS 2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF10N100B |
10 AMP / 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF10N100P SFF10N100N |
10 AMP 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SIHFPG40-E3 |
4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 ROHS COMPLIANT PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| SML100B13 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13 A, 1000 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
|
| BUZ51-E3044 BUZ51-E3045 BUZ51-E3046 |
3.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
3.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
3.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| BUZ50B-220MR1 BUZ50A-220MR1 |
1.5 A, 1000 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB HERMETIC SEALED, METAL, TO-220M, 3 PIN
1 A, 1000 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB HERMETIC SEALED, METAL, TO-220M, 3 PIN
|
TT electronics Semelab, Ltd.
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
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