| PART |
Description |
Maker |
| TC55WDM536AFFN15 TC55WDM536AFFN16 TC55WDM536AFFN20 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| K7N161801A-QFCI25_20_16 K7N161845A-QFCI25_20_16 K7 |
512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N161801M K7N163601M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD44325082 UPD44325082F5-E50-EQ2 UPD44325092F5-E5 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC Corp.
|
| UPD44325364F5-E50-EQ2 UPD44325084 UPD44325084F5-E3 |
36M-BIT QDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| PD46365092BF1-E40-EQ1 PD46365182BF1-E33Y-EQ1 PD463 |
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
