| PART |
Description |
Maker |
| FDD044AN03 FDD044AN03L FDU044AN03L |
VARISTOR STD 250VRMS 3225 SMD 35 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30V N-Channel PowerTrench? MOSFET
30V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管
275am Avg POWER SILICON RECTIFIER DIODES
100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| 302U010A 302U020A 302U030A 302U10A 302U60A 302UR02 |
STANDARD RECOVERY DIODES
50V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
100V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 300A Std. Recovery Diode in a DO-205AB (DO-9)package
320 x 240 pixel format, CFL backlight available with power harness
STANDARD RECOVERY DIODES 标准恢复二极
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| SD600N04PC SD600N08PC SD600N12PC SD600N16PC SD600N |
400V 600A Std. Recovery Diode in a B-8package
1200V 600A Std. Recovery Diode in a B-8package
1600V 600A Std. Recovery Diode in a B-8package
2000V 600A Std. Recovery Diode in a B-8package
2500V 600A Std. Recovery Diode in a B-8package
2800V 600A Std. Recovery Diode in a B-8package
3200V 600A Std. Recovery Diode in a B-8package
|
International Rectifier
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| NID9N05CL NID9N05CLT4 NID9N05CLT4G |
Power MOSFET
Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level(9 A, 52V?昏??靛钩锛???????MOSFET)
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
|
ON Semiconductor
|
| NTE2946 NTE2944 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IRLU8743PBF IRLR8743PBF |
160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
