| PART |
Description |
Maker |
| ENA1061A 2SC5501A12 |
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC5226 |
VHF to UHF Wide-Band Low-Noise Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| ENA1064A |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC5229 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo
|
| 2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP
VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC4869 2SC4869-5 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 50MA I(C) | SOT-143R
VHF to UHF Wide-Band Low-Noise Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC5226 2SC5226-4 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
晶体管|晶体管|叩| 10V的五（巴西）总裁|提供70mA一c）|的SOT - 323
|
Sanyo
|
| MT6L63FS |
VHF~UHF Band Low-Noise Amplifier Applications
|
Toshiba Semiconductor
|
| MT6L57AFS |
VHF~UHF Band Low-Noise Amplifier Applications
|
Toshiba Semiconductor
|
| MT6L56E |
VHF-UHF Band Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| MT6L55E |
VHF-UHF Band Low Noise Amplifier Application
|
Toshiba Semiconductor
|
