| PART |
Description |
Maker |
| FS6M12653RTC FS6M12653RTCTU FS6M12653RTCYDT |
12A/650V 70KHz Power Switch
Fairchild Power Switch(FPS)
|
FAIRCHILD[Fairchild Semiconductor]
|
| FSQ0465RBLDTU FSQ0465RBWDTU FSQ0465RB FSQ0465RS FS |
SMPS Power switch(QRC), 4A, 650V, TO220F (Green)
Green-Mode Fairchild Power Switch (FPS-TM) for Quasi-Resonant Operation - Low EMI and High Efficiency
Green-Mode Fairchild Power Switch (FPS) for Quasi-Resonant Operation - Low EMI and High Efficiency
|
Fairchild Semiconductor
|
| 12N65G-T2Q-T 12N65G-TA3-T 12N65G-TF1-T 12N65L-T2Q- |
12A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| FSQ51009 FSQ510M FSQ510 |
SMPS Power Switch(QRC), 0.5A, 700V, 7DIP/7LSOP/8DIP (Green)
Green Mode Fairchild Power Switch
|
Fairchild Semiconductor
|
| IRFB9N65 IRFB9N65A |
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| FSDH0165D |
Fairchild Power Switch(FPS)
1A/650V 100KHz Power Switch
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A
TRIAC 12A/600V
TRIAC 12A/500V
Triacs
|
Philips Semiconductors
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
