| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SHD626031 SHD626031D SHD626031N SHD626031P SHD6260 |
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
|
Sensitron Semiconductor
|
| GB01SHT12-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| UPSC203 UPSC403 UPSC603 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
Microsemi Corporation
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve...
From old datasheet system
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
