| PART |
Description |
Maker |
| AOB25S65 AOT25S65 AOTF25S65 AOB25S65L |
650V 25A a MOS TM Power Transistor
650V 25A a MOS Power Transistor
|
Alpha & Omega Semicondu...
Alpha & Omega Semiconductor...
Alpha & Omega Semiconductors
|
| APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| AOW15S65 AOWF15S65 |
650V 15A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK1053DPB-15 RJK1053DPB-13 |
100V, 25A, 13m?max Silicon N Channel Power MOS FET Power Switching
100V, 25A, 13m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT10035JFLL |
POWER MOS 7 1000V 25A 0.350 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
