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IBM0164405B - 16M x 4 13/11 EDO DRAM(16M x 4 动态RAM(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)

IBM0164405B_6059002.PDF Datasheet


 Full text search : 16M x 4 13/11 EDO DRAM(16M x 4 动态RAM(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)
 Product Description search : 16M x 4 13/11 EDO DRAM(16M x 4 动态RAM(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)


 Related Part Number
PART Description Maker
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
Elpida Memory
HM5164405FTT-5 HM5165405FTT-5 HM5164405FTT-6 HM516 16M x 4-bit EDO DRAM, 50ns
16M x 4-bit EDO DRAM, 60ns
Hitachi Semiconductor
MC-4216LFC721FH-A60 16M X 72 EDO DRAM MODULE, 60 ns, PDMA168

M53231600CJ0-C50 16M X 32 EDO DRAM MODULE, 50 ns, SMA72

UG42W6424GSG UG42W6448GSG UG42W6428GSG 16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
List of Unclassifed Manufacturers
ETC[ETC]
UG42W6448GSG 16M Bytes (2M x 64 bits) EDO Mode Unbuffered SODIMM 1,600字节米64位),江户模式缓冲的SODIMM
Electronic Theatre Controls, Inc.
HB56UW1673E-5F HB56UW1673E-6F HB56UW1673E-F 128MB Buffered EDO DRAM DIMM 16-Mword × 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M × 4 components)
128MB Buffered EDO DRAM DIMM 16-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 隆驴 4 components)
Elpida Memory
HB56UW3272ETK-5F HB56UW3272ETK-6F HB56UW3272ETK-F 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword 隆驴 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M 隆驴 4 components)
Elpida Memory
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC 256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
SIEMENS AG
IBM13M16734BCC 16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
IBM Microeletronics
MC-4516CD646 16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
NEC Corp.
TC58NS128ADC 128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
TOSHIBA
 
 Related keyword From Full Text Search System
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IBM0164405B programmable IBM0164405B Corp IBM0164405B gain IBM0164405B state IBM0164405B programmable
 

 

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