PART |
Description |
Maker |
HM5164405FTT-5 HM5165405FTT-5 HM5164405FTT-6 HM516 |
16M x 4-bit EDO DRAM, 50ns 16M x 4-bit EDO DRAM, 60ns
|
Hitachi Semiconductor
|
HYB3164405J-60 |
16M X 4 EDO DRAM, 60 ns, PDSO34
|
INFINEON TECHNOLOGIES AG
|
HM5117405 |
(HM5116405 / HM5117405) 16M EDO DRAM
|
Hitachi
|
MC-4216LFC721FH-A60 |
16M X 72 EDO DRAM MODULE, 60 ns, PDMA168
|
|
IBM0164405B |
16M x 4 13/11 EDO DRAM(16M x 4 动态RAM(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)
|
International Business Machines, Corp.
|
HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
Hitachi Semiconductor Hitachi,Ltd.
|
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6 |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh 16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位)2刷新
|
Hitachi,Ltd.
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144 4M X 64 EDO DRAM MODULE, 60 ns, ZMA144 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density 2M x 64 Bit EDO DRAM Module (SO-DIMM)... 4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
IBM13M16734BCD |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|