| PART |
Description |
Maker |
| AP28G45GEM |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| AP20G45EJ AP20G45EH |
N-CHANNEL INSULATED GATE
|
A-POWER[Advanced Power Electronics Corp.]
|
| SCVP0345N1 SCVP0345N2 SJVP0345N2 SXVP0345N2 SXVVP0 |
1.5 A, 450 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
400 mA, 450 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Supertex, Inc.
|
| MSAHX60F60A MSAGX60F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| AP30G120SW |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics
|
