PART |
Description |
Maker |
MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET N-channel Trenchmos (tm) logic level FET N-channel TrenchMOS⑩ logic level FET From old datasheet system N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET 金属门射频硅场效应管 METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MTM86627 |
Silicon P-channel MOS FET (FET)
|
Panasonic
|
FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
2SK2503 A5800293 |
Transistors > MOS FET > Power MOS FET Small switching (60V, 5A) From old datasheet system
|
ROHM[Rohm]
|