| PART |
Description |
Maker |
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| KBU1001 KBU1002 KBU1006 KBU10005 KBU1004 KBU1010 K |
Tantalum Molded Capacitor; Capacitance: 47uF; Voltage: 6.3V; Case Size: 1.1x3.4 mm; Packaging: Tape & Ammo 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
10 AMP SILICON BRIDGE RECTIFIER
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A.
Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
| 1N4819 1N4816 20D8 10D05 10D1 10D10 10D2 10D4 10D6 |
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES
V(rrm): 700V; 1.5A molded silicon rectifier diode
From old datasheet system
1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES 1.5.0安培成型一般整流二极管
V(rrm): 600V; 1.5A molded silicon rectifier diode
V(rrm): 800V; 1.5A molded silicon rectifier diode
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 1N1190 JANTXV1N3768R 1N1184 1N1184R 1N1186 1N1186R |
Standard Rectifier (trr more than 500ns)
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-SOIC -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 20-HTSSOP -40 to 125 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| CBR50-020P CBR50-100P CBR50-040P CBR50-060P CBR50- |
50 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
50 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
50 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
50 AMP SILICON BRIDGE RECTIFIER 200 thru 1000 VOLTS
Leaded Bridge Rectifier General Purpose
|
CENTRAL[Central Semiconductor Corp]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| CMR2U-0110 CMR2U-02 CMR2U-04 CMR2U-06 CMR2U-08 CMR |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 2 AMP, 100 THRU 1000 VOLTS
2 A, 800 V, SILICON, RECTIFIER DIODE SMB, 2 PIN
|
Central Semiconductor Corp
Central Semiconductor, Corp.
|
| CBR1F-D100S CBR1F-D020S CBR1F-D040S CBR1F-D060S CB |
SMD Bridge Rectifier Fast Recovery
1.0 AMP DUAL IN LINE FAST RECOVERY SILICON BRIDGE RECTIFIER 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1.0 AMP DUAL IN LINE FAST RECOVERY SILICON BRIDGE RECTIFIER 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| CR3-100GPP CR3-005GPP CR3-010GPP CR3-020GPP CR3-04 |
GLASS PASSIVATED JUNCTION GENERAL PURPOSE SILICON RECTIFIER 3.0 AMP 50 THRU 1000VOLTS 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
Leaded Rectifier General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| JHV37H2O PHV616 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 85; Vrwm (V): 20000; IR (µA): 50; 85 A, SILICON, RECTIFIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 15; IFSM (A): 400; Vrwm (V): 16000; IR (µA): 5000; 20 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
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