PART |
Description |
Maker |
RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
|
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
JANSR2N7410 FN4500 |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
2SK1405 2SK1405-E |
15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
IRF9520 |
6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
STP9N60M2 STD9N60M2 |
Extremely low gate charge N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics ST Microelectronics
|
2SK3567 |
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
BSP125L6327 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
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