PART |
Description |
Maker |
KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23V32005BG |
32M-Bit (4Mx8/2Mx16) COMS MASK ROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
LH28F320S5H-L |
32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M 2Mx16 / 4Mx8 )Boot Block 闪速存储器)
|
Sharp Corporation
|
AT49BV321T-85CI AT49BV321T-85TI AT49BV320T-85TI AT |
EEPROM|FLASH|2MX16|CMOS|TSSOP|48PIN|PLASTIC Metal Film Resistor - RN 1/4 T1 18 5% A EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | TSSOP封装| 48PIN |塑料 EEPROM|FLASH|2MX16|CMOS|BGA|46PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16 |的CMOS | BGA封装| 46PIN |塑料 EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Microchip Technology, Inc. Anpec Electronics, Corp.
|
K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EDD2508AKTA-5C EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400) 256M比特DDR SDRAM内存2M的字× 8位,支持DDR400
|
Elpida Memory, Inc.
|
EDE5116AFSE-5C-E EDE5116AFSE-6E-E EDE5116AFSE-4A-E |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory, Inc.
|
KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04 32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|