| PART |
Description |
Maker |
| JB99T |
20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES
|
GETAI ELECTRONICS DEVIC...
|
| ESJC60S20 |
400mA 20kV -High Voltage Power Diodes
|
GETAI ELECTRONICS DEVIC...
|
| 2CL71A |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 8KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| 2CL04 |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 4KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| SHV-10 |
10kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| SHV-12 |
12kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| Q62702-A930 BA586 |
CAP CER THREADED 20KV 5200PF Y5S
Silicon PIN Diode
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFP181W Q62702-F1501 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GL35-00 GL35-01 GL35-02 GL35-04 GL35-06 GL35-08 GL |
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 120uF; Voltage: 6.3V; Case Size: 6.3x7 mm; Packaging: Bulk 在行高硅桥式整流器电流（电压- 5000伏特电流- 155安培
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) 在行高硅桥式整流器电流（电压- 5000伏特电流- 1535安培
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) 在行高硅桥式整流器电流（电压- 5000伏特电流- 155安培
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 22uF; Voltage: 6.3V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 68uF; Voltage: 6.3V; Case Size: 4x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 56uF; Voltage: 6.3V; Case Size: 5x7 mm; Packaging: Bulk
XTAL CER SMT 6X3.5 2PAD
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x20 mm; Packaging: Bulk
LED Panel Indicator; LED Color:Yellow; Luminous Intensity:40foot lambert; Forward Current:8.5mA; Forward Voltage:125V; Operating Temperature Range:-25 C to 85 C; Color:Yellow; Leaded Process Compatible:No RoHS Compliant: No
|
Transys Electronics, Ltd.
Transys Electronics Ltd.
TRSYS
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
