| PART |
Description |
Maker |
| MGICP020 |
Low rDS Small Signal MOSFET TMOS P-Channel High Side Driver
|
Motorola Semiconductor
|
| BSO613SPV |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SO-8, RDSon = 0.13
|
Infineon Technologies AG
|
| 2N7000 |
High density cell design for low RDS(ON) Voltage controlled small signal switch
|
TY Semiconductor Co., Ltd
|
| NTR2101P NTR2101PT1 |
Small Signal MOSFET 8.0V, 3.7A, Single P Channel, SOT23(8.0V, 3.7A双功率MOSFET) 小信号MOSFET 8.0V.7A，单P通道，SOT23封装8.0V.7A双功率MOSFET的）
Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 3700 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BSS138 |
TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
|
Vishay Semiconductors
|
| SI4421DY-T1-E3 |
TRANSISTOR 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
Vishay Siliconix
|
| BSS84P06 BSS84P-L6327 BSS84P-L6433 |
SIPMOS Small-Signal-Transistor
170 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET GREEN, PLASTIC PACKAGE-3
|
Infineon Technologies AG
|
| STK7002F |
Small Signal TR > Small Signal MOSFET
N-CHANNEL ENHANCEMENT-MODE MOSFET
|
AUK corp
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
|
