PART |
Description |
Maker |
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
TSHG5510 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Components
|
VSMF2890GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMG10850-13 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
|
Vishay Siliconix
|
NTE3027 NTE3017 |
Infrared Emitting Diode High Speed for Remote Control
|
NTE[NTE Electronics]
|
VSLB9530S |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
VSMB14940 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
TSFF5510 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSMF3710-GS18 TSMF3710 TSMF3710-GS08 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
TSFF541009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|