| PART |
Description |
Maker |
| DTC143ZAA DTC114GFA DTC124GFA DTC115GFA DTC123YFA |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 30mA的一（c）|2VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 500NA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
|
Samsung Semiconductor Co., Ltd.
Rohm Co., Ltd.
|
| BC857BLP-7 BC857BLP-7B BC857BLP11 DIODESINC-BC857B |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| 2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|园区
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五（巴西）总裁| 5A条一（c）|园区
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|园区
晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|律师- 71
5个引#181;带看门狗和手动复位的P监控电路
晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）|园区
晶体管|晶体管|叩| 20V的五（巴西）总裁| 1A条一（c）|律师- 71
晶体管|晶体管|叩| 400V五（巴西）总裁| 100mA的一（c）|律师- 71
晶体管|晶体管|叩| 25V的五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
| 2SB1566 A5800383 |
Power Transistor (-50V, -3A) 功率晶体管（- 50V的三号甲
Power Transistor (-50V/ -3A)
From old datasheet system
|
Rohm Co., Ltd.
|
| ZXT12N50DX ZXT12N50DXTA ZXT12N50DXTC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Dual NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2DC4617QLP-7B 2DC.617QLP-7 2DC.617QLP11 2DC4617QLP |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| 2SB826 2SB826R |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB
POWER TRANSISTORS(12A,50V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SD330D 2SD330E 2SB514C 2SB514E 2SB514F |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-220AB
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 50V五（巴西）总裁|甲一（c）| TO - 220AB现有
|
Advanced Interconnections, Corp.
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz
Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers
ETC
GHz Technology
|
| UMA9N FMA9 FMA9A FMA9N |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
Digital transistor (Common Emitter Dual Transistors)
|
Rohm CO.,LTD.
Microsemi Corporation
ROHM[Rohm]
|
