| PART |
Description |
Maker |
| 1206SXXX 1808AXXX 2225AXXX 2220GXXX 1825CXXX 2220H |
High Voltage MLC Chips
|
AVX Corporation
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| RM5 |
RoHS Compliant SMPS Stacked MLC Capacitors
|
AVX
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HQCCAA271MA11A HQCEAA271MA11A HQCCAA271MA19A HQCEA |
Hi-Q High RF Power MLC Surface Mount Capacitors
Hi-Q High RF Power MLC Surface Mount Capacitors
|
AVX Corporation
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CG0603MLC-05E CG0603MLC-12E |
MLC Series Varistor ESD Clamp Protectors RESISTOR, VOLTAGE DEPENDENT, 12 V, SURFACE MOUNT
MLC Series Varistor ESD Clamp Protectors RESISTOR, VOLTAGE DEPENDENT, 5 V, SURFACE MOUNT
|
Bourns Inc.
Bourns, Inc.
|
| NZG50-5M |
Legacy 100 Hz to 5 MHz
|
Micronetics, Inc.
|
| NZG10-1M |
Legacy 100 Hz to 1 MHz
|
Micronetics, Inc.
|
| NZG100-20K |
Legacy 100 Hz to 20 kHz
|
Micronetics, Inc.
|
