| PART |
Description |
Maker |
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI740G IRFI740 IRFI740GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A)
|
IRF[International Rectifier]
|
| IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)
Hexfet? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFP3710PBF IRFP3710PBF-15 |
HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025Ω , ID = 57A )
HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025ヘ , ID = 57A )
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)
Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
| IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
