| PART |
Description |
Maker |
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
| UPD444008 UPD444008LE-12 UPD444008LE-10 UPD444008L |
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
|
NEC Corp.
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| UT62L1024 UT62L1024SC-35L UT62L1024SC-35LL UT62L10 |
128K X 8 BIT LOW POWER CMOS SRAM 128K的8位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
UTRON Technology
|
| UT62256SC-70 UT62256 UT62256SC-35 UT62256SC-35L UT |
32K X 8 BIT LOW POWER CMOS SRAM 32K的8位低功耗CMOS SRAM
From old datasheet system
|
UTRON Technology
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UT621024SC-70L UT621024SC-70LL UT621024SC-35L UT62 |
128K X 8 BIT LOW POWER CMOS SRAM 128K的8位低功耗CMOS SRAM
GT 8C 8#12 PIN PLUG
|
Rochester Electronics, LLC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
UTRON Technology
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM626 |
Low Power SRAMs
IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
64 k SRAM (8-kword x 8-bit)
Data Selectors/Multiplexers 20-LCCC -55 to 125
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
