| PART |
Description |
Maker |
| CXK79M36C162GB-5 |
18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) 35.7 1x2Lp HSTL高速（512KB的36同步静态存储器
|
Sony, Corp.
|
| CXK77K36R320GB CXK77K36R320GB-3 CXK77K36R320GB-33 |
32Mb LW R-R HSTL High Speed Synchronous SRAM (1Mb x 36)
|
Sony Corporation
|
| CXK77K18R320GB CXK77K18R320GB-3 CXK77K18R320GB-33 |
32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18)
|
Sony Corporation
|
| MC100EP809FAG MC100EP809FAR2G MC100EP80906 MC100EP |
3.3V 1:9 Differential HSTL/PECL to HSTL Clock Driver with LVTTL Clock Select and Enable
|
ONSEMI[ON Semiconductor]
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| ICS8421004I ICS8421004AGI ICS8421004AGIT |
FEMTOCLOCKS?/a> CRYSTAL-TO-HSTL FREQUENCY SYNTHESIZER
FemtoClocks? HSTL Frequency Synthesizer
FEMTOCLOCKS⑩ CRYSTAL-TO-HSTL FREQUENCY SYNTHESIZER
|
ICST[Integrated Circuit Systems]
|
| BL-R313G BL-R513G BL-BX113G BL-BX113C BL-BX139 BL- |
BIGGER SIZE LED LAMPS (ROUND TYPES) 较大尺寸的LED节能灯（圆形类型
MBL /-5V/200MV RED
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125
High Speed CMOS Logic Phase-Locked Loop with VCO and Lock Detector 16-PDIP -55 to 125
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SOIC -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125
High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-PDIP -55 to 125
|
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Yellow Stone, Corp.
早安股份有限公司
|
