| PART |
Description |
Maker |
| APT19F100J |
1000V, 19A, 0.46ヘ Max, trr ÷270ns
|
MICROSEMI[Microsemi Corporation]
|
| SL74HC123N SL74HC123D SL74HC123 HC123 |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1000V; Forward Current Avg Rectified, IF(AV):2A; Non Repetitive Forward Surge Current Max, Ifsm:70A; Forward Voltage Max, VF:1.1V; Package/Case:DO-15 双Retriggerable单稳态触发器
Dual Retriggerable Monostable Multivibrator
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| EP01C AP01C EP01 |
1000V,Fast-Recovery Rectifier Diodes(1000V,快速恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| AOT29S50 |
500V 29A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| GBU410-G |
Bridge Rectifiers, V-RRM=1000V, V-DC=1000V, I-(AV)=4A
|
Comchip Technology
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|
| STD29NF03LT4 |
N-CHANNEL 30V - 0.015 OHM - 29A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| FAN2502S26 FAN2503S25 |
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -6) 积极的固定电压稳压器
|
Fairchild Semiconductor, Corp.
3M Company
|
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
