| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| LMBTA13LT1G-15 |
Darlington Amplifier Transistors
|
Leshan Radio Company
|
| LMBTA14LT1 LMBTA13LT1 |
Darlington Amplifier Transistors 达林顿晶体管放大
|
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| ADA-4789-15 |
Silicon Bipolar Darlington Amplifier
|
AVAGO TECHNOLOGIES LIMI...
|
| NTE275 NTE274 |
Silicon complementary PNP transistor. Darlington power apmlifier, switch.
Silicon Complementary Transistors Darlington Power Amplifier, Switch
|
NTE[NTE Electronics]
|
| LMBTA14LT3G LMBTA13LT3G LMBTA13LT1G LMBTA14LT1G |
Darlington Amplifier Transistors RoHS requirements.
|
Leshan Radio Company
|
| 2SB895A |
Si PNP epitaxial planar darlington. AF amplifier.
|
Panasonic
|
| SAP09N |
BUILT-IN TEMPERATURE COMPENSATION DIODES / BUILT-IN EMITTER RESISTOR DARLINGTON
Darlington Transistor For Audio Amplifier With Temperature Compensation
|
SANKEN[Sanken electric]
|
| NTE244 NTE243 |
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| ADA-4743 |
ADA-4743 · Silicon Bipolar Darlington Amplifier
|
Agilent (Hewlett-Packard)
|
