| PART |
Description |
Maker |
| CGHV27100 CGHV27100F CGHV27100-TB CGHV27100F-AMP |
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
|
Cree, Inc
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MAFR-000226-000001 |
Circulator 2500 - 2700 MHz
|
M/A-COM Technology Solutions, Inc.
|
| SM2527-47L |
2500-2700 MHz 50 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| PTFA261702E |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
|
Infineon Technologies AG
|
| DS10P10-TRF HPJ-TRF HMP-TRF |
2300 MHz - 2700 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.25 dB INSERTION LOSS-MAX 0.560 X 0.350 INCH, ROHS COMPLIANT PACKAGE-3
1800 MHz - 2700 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.4 dB INSERTION LOSS-MAX 0.250 X 0.200 INCH, ROHS COMPLIANT PACKAGE-4
2300 MHz - 2700 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.14 dB INSERTION LOSS-MAX 0.560 X 0.200 INCH, ROHS COMPLIANT PACKAGE-4
|
EMC Technology, Ltd.
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
|
