| PART |
Description |
Maker |
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470 |
DDR2 Unbuffered SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SBC81206-15 SBC81206VG SBC81206VGGR |
2 DDR2 DIMM support up to 2 GB memory capacity
|
Axiomtek Co., Ltd.
|
| HMP351S6AFR8C-S6 HMP351S6AFR8C-S5 HMP351S6AFR8C-Y5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A
|
Hynix Semiconductor, Inc.
|
| 1473149-1 1473149-4 |
DDR1 & DDR2 SODIMM SOCKET 0.6mm PITCH 200POS STANDARD PROFILE STANDARD TYPE (NEW LATCH TYPE)
|
Tyco Electronics
|
| XO63CREANA20M XO63DTEANA24M XO63CREANA40M |
XOSM-533 20M BRE B04 E4 - Bulk
XOSM-533 24M AE B04 E4 - Bulk
XO, Clock, CRYSTAL OSCILLATOR, CLOCK, 40 MHz, HCMOS OUTPUT, HALOGEN FREE AND ROHS COMPLIANT, ULTRA MINIATURE PACKAGE-4
|
Vishay Dale
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| TB0264A |
SAW Filter 533.33 MHz SMD 3.8x3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
TAI-SAW TECHNOLOGY CO.,...
|
